FDS6986AS Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Dual Notebook Power Supply N-Channel PowerTrench SyncFET

March 2005
FDS6986AS
Dual Notebook Power Supply N-Channel PowerTrench^® SyncFET^™
General Description
Features
The FDS6986AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6986AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
7.9A, 30V
R_DS(on) = 20 mΩ @ V_GS = 10V
R_DS(on) = 28 mΩ @ V_GS = 4.5V
• Q1: Optimized for low switching losses
Low gate charge (10 nC typical)
6.5A, 30V
R_DS(on) = 29 mΩ @ V_GS = 10V
R_DS(on) = 38 mΩ @ V_GS = 4.5V
D
D
D
D
SO-8
Pin 1 SO-8
G
SS
S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6986AS
FDS6986AS
13”
FDS6986AS
FDS6986AS_NL (Note 4)
13”
©2005 Fairchild Semiconductor Corporation
Q2
5
4
6
3
7
Q1
2
8
1
Q2
Q1
30
30
±20
±16
7.9
6.5
30
20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
40
Tape width
12mm
12mm
°C/W
°C/W
Quantity
2500 units
2500 units
FDS6986AS Rev A(X)