FDS6984S Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Dual Notebook Power Supply N-Channel PowerTrench SyncFET™

September 2000
FDS6984S
Dual Notebook Power Supply N-Channel PowerTrench^ SyncFET^™
General Description
The FDS6984S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6984S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky diode
= 8.5A, 30V R_DS(on) = 19 mΩ @ V_GS = 10V
= R_DS(on) = 28 mΩ @ V_GS = 4.5V
• Q1: Optimized for low switching losses
Low gate charge ( 5 nC typical)
= 5.5A, 30V R_DS(on) = 0.040Ω @ V_GS = 10V
= R_DS(on) = 0.055Ω @ V_GS = 4.5V
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6984S
FDS6984S
13”
5
4
6
Q1
3
7
2
8
Q2
1
Q2
Q1
30
30
±20
±20
8.5
5.5
30
20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
78
°C/W
40
°C/W
Tape width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS6984S Rev C(W)