FDS6982 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – Dual N-Channel, Notebook Power Supply MOSFET

June 1999
FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to replace two single SO-8 MOSFETs
in synchronous DC:DC power supplies that provide the
various peripheral voltage rails required in notebook
computers and other battery powered electronic devices.
FDS6982 contains two unique 30V, N-channel, logic level,
PowerTrench^TM MOSFETs designed to maximize power
conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-side
switch (Q2) is optimized for low conduction (less than 20mΩ
at V_GS = 4.5V).
Applications
• Battery powered synchronous DC:DC converters.
• Embedded DC:DC conversion.
Features
• Q2: 8.6A, 30V. R_DS(on) = 0.015 Ω @ V_GS = 10V
R_DS(on) = 0.020 Ω @ V_GS = 4.5V
• Q1: 6.3A, 30V. R_DS(on) = 0.028 Ω @ V_GS = 10V
R_DS(on) = 0.035 Ω @ V_GS = 4.5V
• Fast switching speed.
• Low gate charge (Q1 typical = 8.5nC).
• High performance trench technology for extremely
low R .
DS(ON)
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Absolute Maximum Ratings ^T_A ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
5
Q1
4
6
3
7
2
Q2
8
1
Q2
Q1
30
30
±20
±20
8.6
6.3
30
20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6982
FDS6982
13”
©1999 Fairchild Semiconductor Corporation
78
40
Tape Width
12mm
°C/W
°C/W
Quantity
2500 units
FDS6982, Rev. C