FDS6930A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

October 1998
FDS6930A
Dual N-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
Features
5.5 A, 30 V. R_DS(ON) = 0.040 Ω @ V_GS = 10 V
R_DS(ON) = 0.055 Ω @ V_GS = 4.5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low
R_DS(ON).
High power and current handling capability.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
D2
D2
D1
D1
F6D9S30A
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
5
6
7
8
SOIC-16
4
3
2
1
Absolute Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
(Note 1)
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6930A
30
±20
5.5
20
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
W
°C
°C/W
°C/W
FDS6930A Rev.D