FDS6912A_03 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual N-Channel Logic Level PowerTrench MOSFET

July 2003
FDS6912A
Dual N-Channel Logic Level PowerTrench^® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 6 A, 30 V.
RDS(ON) = 28 mΩ @ VGS = 10 V
RDS(ON) = 35 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D^D1
D^D1
D^D2
D^D2
SO-8
Pin 1 ^SO-8
S_S2G^S2SS1GG1
5
4
6
Q1
3
7
2
Q2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6912A
FDS6912A
13’’
Ratings
30
± 20
6
20
1.6
1.0
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6912A Rev D(W)