FDS6900S Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Dual N-Ch PowerTrench SyncFet

January 2003
FDS6900S
Dual N-Ch PowerTrench^ SyncFet^™
General Description
The FDS6900S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6900S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V
R_DS(on) = 22mΩ @ V_GS = 10V
R_DS(on) = 29mΩ @ V_GS = 4.5V
• Q1: Optimized for low switching losses
Low Gate Charge ( 8 nC typical)
6.9A, 30V
R_DS(on) = 30mΩ @ V_GS = 10V
R_DS(on) = 37mΩ @ V_GS = 4.5V
S_D1D2
S_D1D2
S_D1D2
D^G1
SO-8
Pin 1 _SO-
D_S1DS^1GS2SG2
1
8
2
Q1
7
3
6
Q2
4
5
Dual N-Channel SyncFet
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6900S
FDS6900S
13”
2003 Fairchild Semiconductor Corporation
Q2
Q1
30
30
±20
±20
8.2
6.9
30
20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
°C/W
40
°C/W
Tape width
12mm
Quantity
2500 units
FDS6900S Rev C(W)