FDS6898AZ_F085 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

February 2010
FDS6898AZ_F085
tm
Dual N-Channel Logic Level PWM Optimized PowerTrench^® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 9.4 A, 20 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
RDS(ON) = 18 mΩ @ VGS = 2.5 V
• Low gate charge (16 nC typical)
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
D^D2DD1DD1
D^D2
SO-8
Pin 1 ^SO-8
S_S2G^S2SS1GG1
5
6
Q1
7
Q2
8
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6898AZ
FDS6898AZ_F085
13’’
©2010 Fairchild Semiconductor Corporation
1
FDS6898AZ_F085 Rev. A
Ratings
20
± 12
9.4
38
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
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