FDS6814 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench™ MOSFET

July 1999
ADVANCE INFORMATION
FDS6814
Dual N-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced
using a rugged gate version of Fairchild's advanced
PowerTrench^TM process. It has been optimized for
power management applications which require a wide
range of gate drive voltage.
Applications
• Low voltage DC/DC Converters
• Load switch
• Battery protection
• Power management
Features
• 8 A, 20 V. R_DS(ON) = 0.020 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.030 Ω @ V_GS = 2.5 V
• Rugged gate rating ( ±12V).
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D2
D2
5
D1
D1
6
G2
7
S2
SO-8
G1
S1
8
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6814
FDS6814
13’’
1999 Fairchild Semiconductor Corporation
4
3
2
1
Ratings
20
±12
8
50
2.0
1.6
1.0
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6814 Rev. A