FDS6699S Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET

January 2005
FDS6699S
30V N-Channel PowerTrench^® SyncFET™
Features
■ 21 A, 30 V Max R_DS(ON) = 3.6 mΩ @ V_GS = 10 V
Max R_DS(ON) = 4.5 mΩ @ V_GS = 4.5 V
■ Includes SyncFET Schottky body diode
■ High performance trench technology for extremely low
R_DS(ON) and fast switching
■ High power and current handling capability
■ 100% R_G (Gate Resistance) tested
Applications
■ Synchronous Rectifier for DC/DC Converters –
■ Notebook Vcore low side switch
■ Point of Load low side switch
General Description
The FDS6699S is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low R_DS(ON) and low gate charge. The
FDS6699S includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
30
±20
21
105
2.5
1.2
1
–55 to +125
50
25
Package Marking and Ordering Information
Device Marking
FDS6699S
Device
FDS6699S
Reel Size
13’’
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS6699S Rev. D
www.fairchildsemi.com