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FDS6692A_10 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ | |||
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January 2010
FDS6692A
N-Channel PowerTrench® MOSFET
30V, 9A, 11.5mâ¦
Features
 RDS(ON) = 11.5mâ¦, VGS = 10V, ID = 9A
 RDS(ON) = 14.5mâ¦, VGS = 4.5V, ID = 8.2A
 High performance trench technology for extremely low
RDS(ON)
 Low gate charge
 High power and current handling capability
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
RDS(ON) and fast switching speed.
Applications
 DC/DC converters
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
©2010 Fairchild Semiconductor Corporation
1
FDS6692A Rev. A2
www.fairchildsemi.com
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