FDS6690AS_08 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench® SyncFET™

May 2008
FDS6690AS
tm
30V N-Channel PowerTrench^® SyncFET^™
General Description
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDS6690AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Low side notebooks
Features
• 10 A, 30 V. R_DS(ON) max= 12 mΩ @ V_GS = 10 V
R_DS(ON) max= 15 mΩ @ V_GS = 4.5 V
• Includes SyncFET Schottky diode
• Low gate charge (16nC typical)
• High performance trench technology for extremely low
R_DS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690AS
FDS6690AS
13’’
5
4
6
3
7
2
8
1
Ratings
30
±20
10
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6690AS Rev A2(X)