FDS6690A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrenchTM MOSFET

February 2007
FDS6690A
tm
Single N-Channel, Logic-Level, PowerTrench^® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 11 A, 30 V.
RDS(ON) = 12.5 mΩ @ VGS = 10 V
RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD^DD
DD
DD
SO-8
Pin 1 SO-8 ^SS ^{SS SS GG}
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
EAS
TJ, TSTG
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690A
FDS6690A
13’’
Ratings
30
±20
11
50
2.5
1.0
96
–55 to +150
50
125
25
Tape width
12mm
Units
V
V
A
W
mJ
°C
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)