FDS6680S Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET™

February 2000
PRELIMINARY
FDS6680S
30V N-Channel PowerTrench^ SyncFET^™
General Description
The FDS6680S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDS6680 in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor drives
Features
• 11.5 A, 30 V.
RDS(ON) = 0.011 Ω @ VGS = 10 V
RDS(ON) = 0.016 Ω @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
G
SS
SO-8 S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6680S
FDS6680S
13’’
2000 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
30
±20
11.5
50
2.5
1.2
1
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS6680S Rev B (W)