FDS6680A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench MOSFET

November 2004
FDS6680A
Single N-Channel, Logic Level, PowerTrench^® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 12.5 A, 30 V R_DS(ON) = 9.5 mΩ @ V_GS = 10 V
R_DS(ON) = 13 mΩ @ V_GS = 4.5 V
• Ultra-low gate charge
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 ^SS ^{SS SS GG}
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6680A
FDS6680A
13’’
Ratings
30
±20
12.5
50
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
FDS6680A Rev F1(W)