FDS6679AZ_08 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET

FDS6679AZ
P-Channel PowerTrench^® MOSFET
-30V, -13A, 9mΩ
July 2008
tm
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
„ Max r_DS(on) = 9.3mΩ at V_GS = -10V, I_D = -13A
„ Max r_DS(on) = 14.8mΩ at V_GS = -4.5V, I_D = -11A
„ Extended V_GS range (-25V) for battery applications
„ HBM ESD protection level of 6kV typical (note 3)
„ High performance trench technology for extremely low
r_DS(on)
„ High power and current handing capability
„ RoHS Compliant
D
D
D
D
5
4
6
3
G
7
2
SO-8
SS
S
8
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
P_D
(Note 1b)
(Note 1c)
T_J, T_STG Operating and Storage Temperature
Ratings
-30
±25
-13
-65
2.5
1.2
1.0
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50
°C/W
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS6679AZ
Device
FDS6679AZ
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDS6679AZ Rev. B1
www.fairchildsemi.com