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FDS6675A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET | |||
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February 2003
FDS6675A
30V P-Channel PowerTrenchï MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductorâs advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V â 25V).
Applications
⢠Power management
⢠Load switch
⢠Battery protection
Features
⢠â11 A, â30 V
RDS(ON) = 13 m⦠@ VGS = â10 V
RDS(ON) = 19 m⦠@ VGS = â4.5 V
⢠Low gate charge
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6675A
FDS6675A
13ââ
Ratings
â30
±25
â11
â50
2.5
1.2
1
â55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
ï2003 Fairchild Semiconductor Corporation
FDS6675A Rev C (W)
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