FDS6673BZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m Ohm

January 2006
FDS6673BZ
P-Channel PowerTrench^® MOSFET
-30V, -14.5A, 7.8mΩ
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
„ Max r_DS(on) = 7.8mΩ, V_GS = -10V, I_D = -14.5A
„ Max r_DS(on) = 12mΩ, V_GS = -4.5V, I_D = -12A
„ Extended V_GS range (-25V) for battery applications
„ HBM ESD protection level of 6.5kV typical (note 3)
„ High performance trench technology for extremely low
r_DS(on)
„ High power and current handling capability
„ RoHS compliant
D
D
D
D
5
4
6
3
G
7
2
SO-8
SS
S
8
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note1a)
Power Dissipation for Single Operation
(Note1a)
P_D
T_J, T_STG
Operating and Storage Temperature
(Note1b)
(Note1c)
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
Units
V
V
A
A
W
°C
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ
Reel Size
13’’
50
°C/W
25
°C/W
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS6673BZ Rev. B
www.fairchildsemi.com