FDS6673AZ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30 Volt P-Channel PowerTrench MOSFET

April 2005
FDS6673AZ
30 Volt P-Channel PowerTrench^® MOSFET
Features
■ –14.5 A, –30 V. R_DS(ON) = 7.2 mΩ @ V_GS = –10 V
R_DS(ON) = 11 mΩ @ V_GS = – 4.5 V
■ Extended V_GSS range (–25V) for battery applications
■ ESD protection diode (note 3)
■ High performance trench technology for extremely low
R_DS(ON)
■ High power and current handling capability
General Description
This P-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers, and
battery chargers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R_DS(ON) specifi-
cations.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
D
D
D
D
G
SS
SO-8 S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
–30
+25
–14.5
–50
2.5
1.2
1.0
–55 to +175
50
25
Package Marking and Ordering Information
Device Marking
FDS6673AZ
Device
FDS6673AZ
Reel Size
13’’
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS6673AZ Rev. C(W)
www.fairchildsemi.com