FDS6672A_01 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

April 2001
FDS6672A
30V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V
RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (33 nC typical)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6672A
FDS6672A
13’’
5
6
7
8
Ratings
30
±12
12.5
50
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS6672A Rev C(W)