FDS6670S Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET

August 2001
FDS6670S
30V N-Channel PowerTrench^® SyncFET^™
General Description
The FDS6670S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDS6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor drives
Features
• 13.5 A, 30 V.
R_DS(ON) = 9 mΩ @ V_GS = 10 V
R_DS(ON) = 12.5 mΩ @ V_GS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (24nC typical)
• High performance trench technology for extremely low
R_DS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SG
S
SO-8 S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6670S
FDS6670S
13’’
5
6
7
8
Ratings
30
±20
13.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6670S Rev E (W)