FDS6630A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrenchTM MOSFET

April 1999
FDS6630A
N-Channel Logic Level PowerTrench^TM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• 6.5 A, 30 V. R_DS(on) = 0.038 Ω @ V_GS = 10 V
R_DS(on) = 0.053 Ω @ V_GS = 4.5 V
• Low gate charge (5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
D
D
5
4
6
3
SO-8
S ^{pin 1}
G
S
S
7
2
8
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±²⁰
V
ID
Drain Current - Continuous
(Note 1a)
6.5
A
- Pulsed
40
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°^C
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°^C/W
°^C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS6630A
FDS6630A
13’’
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS6630A Rev. C1