FDS6614A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

January 2000
FDS6614A
N-Channel Logic Level PowerTrench^® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• 9.3 A, 30 V. R_DS(on) = 0.018 W @ V_GS = 10 V
R_DS(on) = 0.025 W @ V_GS = 4.5 V.
• Low gate charge (12nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(on).
• High power and current handling capability.
D
D
5
D
D
6
7
G
SS
8
SO-8 S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6614A
FDS6614A
13’’
4
3
2
1
Ratings
30
± 20
9.3
40
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
ã1999 Fairchild Semiconductor Corporation
FDS6614A Rev. C