FDS6612A_03 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single N-Channel, Logic-Level, PowerTrench MOSFET

June 2003
FDS6612A
Single N-Channel, Logic-Level, PowerTrench^® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 8.4 A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 V
RDS(ON) = 30 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 ^SS ^{SS SS GG}
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6612A
FDS6612A
13’’
Ratings
30
±20
8.4
40
2.5
1.0
–55 to +150
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6612A Rev D (W)