FDS6612A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrenchTM MOSFET

July 1998
FDS6612A
Single N-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
8.4 A, 30 V. R_DS(ON) = 0.022 Ω @ V_GS = 10 V,
R_DS(ON) = 0.030 Ω @ V_GS = 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low
R_DS(ON).
High power and current handling capability.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D
D
D
D
F6D6S12A
SO-8
pin 1
S
G
S
S
Absolute Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
5
6
7
8
FDS6612A
30
±20
8.4
40
2.5
1.2
1
-55 to 150
50
25
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS6612A Rev.C1