FDS6609A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

April 2000
PRELIMINARY
FDS6609A
P-Channel Logic Level PowerTrench^® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor Drive
Features
• –6.3 A, –30 V . RDS(ON) = 0.032 Ω @ V _GS = -10 V
RDS(ON) = 0.05 Ω @ V _GS = -4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SSS
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
V DSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6609A
FDS6609A
13’’
5
6
7
8
Ratings
–30
±20
-6.3
-40
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2000 Fairchild Semiconductor Corporation
FDS6609A Rev B(W)