FDS6576_06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

December 2006
tm
FDS6576
P-Channel 2.5V Specified PowerTrench^“ MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is in a rugged
gate version ^®of Fairchild Semiconductor's advanced
PowerTrench^® process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
• Load switch
• Battery protection
• Power management
 –11 A, –20 V. R_DS(ON) = 0.014 : @ V_GS = –4.5 V
 R_DS(ON) = 0.020 : @ V_GS = –2.5 V
r • Extended V_GSS range ( 12V) for battery applications.
• Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
• RoHS Compliant.
D
D
D
D
G
SO-8
SS
S
Absolute Maximum Ratings
T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_TJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_TJA
Thermal Resistance, Junction-to-Ambient (Note 1c)
R_TJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS6576
Device
FDS6576
Reel Size
13’’
5
6
7
8
Ratings
–20
r 12
–11
–50
2.5
1.2
1.0
–55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
qC
qC/W
qC/W
qC/W
Quantity
2500 units
”2006 Fairchild Semiconductor Corporation
FDS6576 Rev E3