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FDS6576 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrenchTM MOSFET | |||
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November 1999
PRELIMINARY
FDS6576
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
 Load switch
 Battery protection
 Power management
Features
 -11 A, -20 V. RDS(ON) = 0.014 ⦠@ VGS = -4.5 V
RDS(ON) = 0.020 ⦠@ VGS = -2.5 V
±  Extended VGSS range ( 12V) for battery applications.
 Low gate charge (44nC typical).
 Fast switching speed.
 High performance trench technology for extremely
low RDS(ON).
 High power and current handling capability.
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©1999 Fairchild Semiconductor Corporation
FDS6576 Rev. B
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