FDS6575_01 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench®MOSFET

September 2001
FDS6575
P-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications wtih a wide range of gate
drive voltage (2.5V – 8V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –10 A, –20 V. RDS(ON) = 13 mΩ @ VGS = –4.5 V
RDS(ON) = 17 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High current and power handling capability
DD
DD
DD
DD
SO-8
Pin 1SO-8 ^{SS SS SS GG}
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6575
FDS6575
13’’
5
4
6
3
7
2
8
1
Ratings
–20
±8
–10
–50
2.5
1.5
1.2
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6575 Rev F(W)