FDS6575 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

November 1998
FDS6575
Single P-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate charge
for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-10 A, -20 V. R_DS(ON) = 0.013 Ω @ V_GS = -4.5 V,
R_DS(ON) = 0.017 Ω @ V_GS = -2.5 V.
Low gate charge (50nC typical).
High performance trench technology for extremely low
R_DS(ON).
High power and current handling capability.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
D
D
D
D
FD65S75
SO-8
pin 1
S
G
S
S
SO-8
5
6
7
8
SOT-223
SOIC-16
4
3
2
1
Absolute Maximum Ratings
Symbol Parameter
T_A = 25^oC unless otherwise noted
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6575
-20
±8
-10
-50
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
FDS6575 Rev.C1