FDS6570A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single N-Channel 2.5V Specified PowerTrench MOSFET

March 2000
FDS6570A
Single N-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Battery protection
Features
• 15 A, 20 V. R_DS(on) = 0.0075 Ω @ V_GS = 4.5 V
R_DS(on) = 0.010 Ω @ V_GS = 2.5 V.
• Low gate charge (47nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
D
D
5
4
6
3
G
SS
SO-8 S
7
2
8
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
FDS6570A
20
±⁸
15
50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°^C
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°^C/W
°^C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS6570A
FDS6570A
13’’
Tape Width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS6570A Rev. C