FDS6375 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

February 1999
FDS6375
Single P-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Battery Protection
Features
• -8.0 A, -20 V. R_DS(on) = 0.024 Ω @ V_GS = -4.5 V
R_DS(on) = 0.032 Ω @ V_GS = -2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
D
D
5
4
6
3
SO-8
G
SS
S
7
2
8
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, T_stg
Operating and Storage Junction Temperature Range
Ratings
-20
±⁸
-8.0
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°^C
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°^C/W
°^C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS6375
FDS6375
13’’
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS6375 Rev. C