FDS6162N7 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

May 2003
FDS6162N7
20V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R_DS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 23 A, 20 V
R_DS(ON) = 3.5 mΩ @ V_GS = 4.5 V
R_DS(ON) = 5.0 mΩ @ V_GS = 2.5 V
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5
Drain Contact
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6162N7
FDS6162N7
13’’
Ratings
20
± 12
23
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS6162N7 Rev C2 (W)