FDS5690 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench MOSFET

March 2000
FDS5690
60V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Motor drives
Features
• 7 A, 60 V. R_DS(on) = 0.028 Ω @ V_GS = 10 V
R_DS(on) = 0.033 Ω @ V_GS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
5
D
D
6
7
G
SS
8
SO-8 S
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
60
±²⁰
7
50
2.5
1.2
1
-55 to +150
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS5690
FDS5690
13’’
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
2500 units
 2000 Fairchild Semiconductor Corporation
FDS5690 Rev. C