 English |
|
|
|
|
|
|
|
| FDS5682 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET | |||
| |||
|
August 2005
FDS5682
N-Channel PowerTrench® MOSFET
60V, 7.5A, 21mâ¦
Features
 rDS(ON) = 21mâ¦, VGS = 10V, ID = 7.5A
 rDS(ON) = 26.5mâ¦, VGS = 4.5V, ID = 6.7A
 High performance trench technology for extremely low
rDS(ON)
 Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
 High power and current handling capability
Applications
 DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2005 Fairchild Semiconductor Corporation
1
FDS5682 Rev. A
www.fairchildsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese