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FDS5680 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench™ MOSFET | |||
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July 1999
FDS5680
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
 DC/DC converter
 Load switch
 Motor drives
Features
 8 A, 60 V. RDS(ON) = 0.020 ⦠@ VGS = 10 V
RDS(ON) = 0.025 ⦠@ VGS = 6 V.
 Low gate charge (30nC typical).
 Fast switching speed.
 High performance trench technology for extremely
low RDS(ON).
 High power and current handling capability.
D
D
D
D
5
4
6
3
7
G
SS
SO-8 S
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
2
1
Ratings
60
±20
8
50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS5680
FDS5680
13ââ
50
25
Tape Width
12mm
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS5680 Rev. C
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