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| FDS5351 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ | |||
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April 2008
FDS5351
N-Channel PowerTrench® MOSFET
60V, 6.1A, 35mâ¦
Features
General Description
 Max rDS(on) = 35m⦠at VGS = 10V, ID = 6.1A
 Max rDS(on) = 42m⦠at VGS = 4.5V, ID = 5.5A
 High performance trench technology for extremely low rDS(on)
 100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
 RoHS Compliant
Application
 Inverter Switch
 Synchronous Rectifier
 Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
60
±20
6.1
30
73
5
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS5351
Device
FDS5351
Package
SO-8
Reel Size
13ââ
Tape Width
12mm
Quantity
2500units
©2008 Fairchild Semiconductor Corporation
1
FDS5351 Rev.C
www.fairchildsemi.com
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