FDS4935 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

June 2001
FDS4935
Dual 30V P-Channel PowerTrench^ MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –7 A, –30 V
RDS(ON) = 23 mΩ @ VGS = –10 V
RDS(ON) = 35 mΩ @ VGS = –4.5 V
• Low gate charge (15nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D^D1DD1
D^D2
D^D2
SO-8
Pin 1 ^SO-8
S_S2G^S2SS1GG1
5
4
6
Q1
3
7
2
Q2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4935
FDS4935
13’’
Ratings
–30
±25
–7
–30
2
1.6
1
0.9
–55 to +175
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS4935 Rev B(W)