FDS4897C Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET

November 2005
FDS4897C
Dual N & P-Channel PowerTrench^® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
• Inverter
• Power Supplies
Features
• Q1: N-Channel
6.2A, 40V
R_DS(on) = 29mΩ @ V_GS = 10V
R_DS(on) = 36mΩ @ V_GS = 4.5V
• Q2: P-Channel
–4.4A, –40V R_DS(on) = 46mΩ @ V_GS = –10V
R_DS(on) = 63mΩ @ V_GS = –4.5V
• High power handling capability in a widely used
surface mount package
• RoHS compliant
D^D2
D^D2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
4
6
3
Q1
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4897C
FDS4897C
13”
©2005 Fairchild Semiconductor Corporation
FDS4897C Rev C(W)
Q1
Q2
40
40
±20
±20
6.2
–4.4
20
–20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
40
Tape width
12mm
°C/W
°C/W
Quantity
2500 units
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