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FDS4897AC Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ
FDS4897AC
October 2008
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
„ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A
Q2: P-Channel
„ Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A
„ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A
„ 100% UIL Tested
„ RoHS Compliant
These dual N- and P-Channel MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench® process
that has been especially tailored to minimize on-state resistance
and yet maintain superior switching performance.
Applications
„ Inverter
„ Power Supplies
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
Q2
D2 5
D2 6
Q1
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
EAS
TJ, TSTG
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Characteristics
TA = 25 °C (Note 1a)
TA = 25 °C (Note 1b)
(Note 3)
Q1
Q2
40
-40
±20
±20
6.1
-5.2
24
-24
2.0
1.6
0.9
37
73
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJC
Thermal Resistance, Junction to Case,
Thermal Resistance, Junction to Ambient,
Package Marking and Ordering Information
(Note 1)
40
(Note 1a)
78
°C/W
Device Marking
FDS4897AC
Device
FDS4897AC
Package
SO-8
Reel Size
13 ”
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDS4897AC Rev.C
www.fairchildsemi.com
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