FDS4885C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET

January 2005
FDS4885C
Dual N & P-Channel PowerTrench^® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• Synchronous rectifier
• Backlight inverter stage
Features
• Q1: N-Channel
7.5A, 40V R_DS(on) = 22mΩ @ V_GS = 10V
R_DS(on) = 35mΩ @ V_GS = 7V
• Q2: P-Channel
–6A, –40V R_DS(on) = 31mΩ @ V_GS = –10V
R_DS(on) = 42mΩ @ V_GS = –4.5V
• Fast switching speed
• High power and handling capability in a widely
used surface mount package
D^D2
D^D2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1 S
S1 S
S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4885C
FDS4885C
13”
Q2
5
4
6
3
Q1
7
2
8
1
Q1
Q2
40
40
±20
±20
7.5
–6
20
–20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
°C/W
40
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4885C Rev D(W)