FDS4770 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench MOSFET

March 2003
FDS4770
40V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 13.2 A, 40 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V
• Low gate charge (30 nC)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 ^SS ^{SS SS GG}
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4770
FDS4770
13’’
Ratings
40
± 20
13.2
45
2.5
1.4
1.2
–55 to +150
50
125
25
Tape width
11mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS4770 Rev B (W)