FDS4675_10 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 40V P-Channel Power TrenchMOSFET

February 2010
FDS4675_F085
tm
40V P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –11 A, –40 V
RDS(ON) = 0.013 Ω @ VGS = –10 V
RDS(ON) = 0.017 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
D
D
D
D
SO-8
Pin 1
G
S
S
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
V GSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4675
FDS4675_F085
13’’
5
4
6
3
7
2
8
1
Ratings
–40
±20
–11
–50
2.4 (steady state)
1.4
1.2
-55 to +175
Units
V
V
A
W
°C
62.5 (steady state), 50 (10 sec)
125
25
°C/W
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDS4675_F085 Rev. A
www.fairchildsemi.com