FDS4672A_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench® MOSFET

February 2007
FDS4672A
tm
40V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 11 A, 40 V. R_DS(ON) = 13 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely
low R_DS(ON)
• Low gate charge (35 nC typical)
• High power and current handling capability
• RoHS Compliant
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
E_AS
Single Pulse Avalanche Energy
(Note 3)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4672A
FDS4672A
13’’
5
6
7
8
Ratings
40
±12
11
50
181
2.5
1.4
1.2
-55 to +175
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
mJ
W
°C
°C/W
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS4672A Rev C1 (W)