FDS4559 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V Complementary PowerTrench MOSFET

April 2002
FDS4559
60V Complementary PowerTrench^MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Power management
• LCD backlight inverter
Features
• Q1: N-Channel
4.5 A, 60 V
R_DS(on) = 55 mΩ @ V_GS = 10V
R_DS(on) = 75 mΩ @ V_GS = 4.5V
• Q2: P-Channel
–3.5 A, –60 V R_DS(on) = 105 mΩ @ V_GS = –10V
R_DS(on) = 135 mΩ @ V_GS = –4.5V
D^D2
D^D2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
4
6
3
Q1
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4559
FDS4559
13”
Q1
Q2
60
–60
±20
±20
4.5
–3.5
20
–20
2
1.6
1.2
1
-55 to +175
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)