FDS4488 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

December 2001
FDS4488
30V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance. These devices are well suited for low
voltage and battery powered applications where low in-
line power loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V
RDS(ON) = 30 mΩ @ VGS = 4.5 V
• Low gate charge (9.5 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD ^DD
DD
SO-8
Pin 1SO-8 ^{SS SS SS GG}
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4488
FDS4488
13’’
5
4
6
3
7
2
8
1
Ratings
30
±25
7.9
40
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS4488 Rev B (W)