FDS4435A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench™MOSFET

October 2001
FDS4435A
P-Channel Logic Level PowerTrench^® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer appli-
cations: load switching and power management, battery
charging circuits, and DC/DC conversion.
Features
• -9 A, -30 V. R_DS(ON) = 0.017 W @ V_GS = -10 V
R_DS(ON) = 0.025 W @ V_GS = -4.5 V
• Low gate charge (21nC typical).
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
5
D
D
6
7
G
SS
SO-8 S
8
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
4
3
2
1
Ratings
-30
± 20
-9
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4435A
FDS4435A
13’’
Tape Width
12mm
Quantity
2500 units
ã2001 Fairchild Semiconductor Corporation
FDS4435A Rev. D