FDS4410A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic-Level, PowerTrench MOSFET

May 2005
FDS4410A
Single N-Channel, Logic-Level, PowerTrench^® MOSFET
Features
■ 10 A, 30 V. R_DS(ON) = 13.5 mΩ @ V_GS = 10 V
R_DS(ON) = 20 mΩ @ V_GS = 4.5 V
■ Fast switching speed
■ Low gate charge
■ High performance trench technology for extremely low
R_DS(ON)
■ High power and current handling capability
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
D
D
SO-8
Pin 1
G
S
S
S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain–Source Voltage
Gate–Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Ratings
30
±20
10
50
2.5
1.0
–55 to +150
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4410A
Device
FDS4410A
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS4410A Rev. B
www.fairchildsemi.com