FDS4080N3_04 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 40V N-Channel FLMP PowerTrench MOSFET

February 2004
FDS4080N3
40V N-Channel FLMP PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R_DS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 13 A, 40 V
R_DS(ON) = 10.5 mΩ @ V_GS = 10 V
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
• Fast switching (Qg = 30 nC )
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
N_DC^DNCDNCDNC
D
F^BL^oM^ttP^omSO^le-8^ss
SO-8
Pin 1SO-8
S_S ^{SS SSGG}
Bottom-side
5
Drain Contact
6
7
8
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4080N3
FDS4080N3
13’’
Ratings
40
± 20
13
60
3.0
–55 to +150
40
0.5
Tape width
12mm
2004 Fairchild Semiconductor Corporation
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS4080N3 Rev E1 (W)