FDS4070N3 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench MOSFET

May 2003
FDS4070N3
40V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R_DS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 15.3 A, 40 V. R_DS(ON) = 7.5 mΩ @ V_GS = 10 V
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5
Drain Contact
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Maximum Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4070N3
FDS4070N3
13’’
Ratings
40
± 20
15.3
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS4070N3 Rev B1 (W)