FDS3992 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100V, 4.5A, 62mΩ

September 2002
FDS3992
N-Channel PowerTrench^® MOSFET
100V, 4.5A, 62mΩ
Features
• r_DS(ON) = 54mΩ (Typ.), V_GS = 10V, I_D = 4.5A
• Q_g(tot) = 11nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82745
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Branding Dash
(1)
(8)
(2)
(7)
5
1
2
3
4
SO-8
(3)
(6)
(4)
(5)
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 50^oC/W)
Continuous (T_A = 100^oC, V_GS = 10V, R_θJA = 50^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Ratings
100
±20
4.5
2.8
Figure 4
167
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/^oC
o_C
Thermal Characteristics
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
50
o_C/W
85
o_C/W
25
o_C/W
Package Marking and Ordering Information
Device Marking
FDS3992
Device
FDS3992
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS3992 Rev. B